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Question #43898
The Question
A biasing circuit for a transistor uses a voltage divider consisting of a fixed ideal resistor and a temperature-sensitive resistor connected in series across a constant DC supply . The output voltage is taken across . To provide thermal compensation, (initial resistance at ) is a thin-film resistor perfectly bonded to the top surface of a bimetallic strip. The strip consists of two metals of equal thickness with linear expansion coefficients (top metal) and (bottom metal). When the temperature increases by , the strip bends, inducing a longitudinal tensile strain on its top surface. The resistor has an intrinsic temperature coefficient of resistance and a strain gauge factor . Assuming the total fractional change in resistance is the sum of the intrinsic thermal and mechanical strain contributions, what is the rate of change of the output voltage with respect to temperature, , at ?
Options
- A.
- B.
- C.
- D.
Check Your Answer
Correct Answer
Step-by-Step Solution
Explanation
How the Examiner Thinks
Multi-Concept_Bridge
Master problems that require linking physics and math concepts to solve complex competitive questions.
Concepts Behind This Question
Transistor Biasing Stability|Thermal Expansion of Area and Volume|Bimetallic Strip Curvature|Cell EMF vs Terminal Voltage
Why This Question Is Tricky
Common Mistakes
This question tests the student's ability to cross-couple thermodynamic deformation with electronic circuit analysis, specifically focusing on non-linear feedback in a biasing circuit.
The primary trap lies in ignoring the mechanical strain induced by the bimetallic strip's bending and only accounting for the intrinsic thermal coefficient of the resistor (), which leads to Option B.
Students often misapply the resistance-temperature formula by failing to recognize that physical mounting geometry (stress-strain) acts as a secondary, coupled mechanism that shifts the Q-point.
Additionally, sign errors can occur if the student incorrectly assumes the top layer undergoes compression rather than tension when , leading to Option C.
Quick Facts About This Question
Question Information
| Subject | Physics |
| Chapter | Semiconductor Electronics: Materials, Devices, and Simple Circuits - Class 12 |
| Concept | Transistor Biasing Stability |
| Difficulty | 8 |
| Cognitive Load | 7 |
| Target Solve Time | 160 sec |
| Access | Free |