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Question #43846
The Question
Consider a 1D space charge region (depletion region) in a semiconductor device spanning . The electric potential at is maintained at , and at the moving boundary it is maintained at a constant value . The electric field at the boundary is always zero. Due to a transient recombination process, the uniform positive space charge density in this region decays exponentially with time as , where and are positive constants. Assuming the permittivity of the medium is , determine the magnitude of the displacement current density at as a function of time .
Options
- A.
- B.
- C.
- D.
Check Your Answer
Correct Answer
Step-by-Step Solution
Explanation
How the Examiner Thinks
Variable_Constraint
Develop pure symbolic logic skills by mastering algebraic constraints without relying on numerical data.
Concepts Behind This Question
Depletion Region Dynamics|Drift Velocity Mechanism|Radioactive Decay Law Dynamics|Differential Equations
Why This Question Is Tricky
Common Mistakes
This question tests the student's ability to couple time-varying electromagnetic fields with semiconductor electrostatics, specifically targeting the misconception of treating a depletion region as a static capacitor.
A common trap (Option B) is to assume the depletion width remains constant, leading students to directly differentiate and obtain a displacement current proportional to .
However, to maintain a constant built-in potential as the charge density decays, the depletion boundary must dynamically expand (drift).
By forcing the use of Poisson's equation, students must realize that , which alters the time dependence of the electric field at the origin to , fundamentally changing the displacement current derivative.
Quick Facts About This Question
Question Information
| Subject | Physics |
| Chapter | Semiconductor Electronics: Materials, Devices, and Simple Circuits - Class 12 |
| Concept | Depletion Region Dynamics |
| Difficulty | 8 |
| Cognitive Load | 7 |
| Target Solve Time | 160 sec |
| Access | Free |