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Question #43465

Difficulty: 8/10 | 🟢 Free

The Question

An LED and a photodiode are fabricated from the same intrinsic semiconductor material. The energy bandgap EgE_g (in J\text{J}) of the material depends on the absolute temperature TT (in K\text{K}) as Eg(T)=E0−αTE_g(T) = E_0 - \alpha T, where E0E_0 (in J\text{J}) and α\alpha (in J/K\text{J/K}) are positive constants. The threshold voltage for the LED is given by Vth=Eg/eV_{th} = E_g/e (where ee is the elementary charge in C\text{C}). The dark current IdI_d (in A\text{A}) of the reverse-biased photodiode is proportional to exp⁡(−Eg2kBT)\exp\left(-\frac{E_g}{2k_BT}\right), where kBk_B is the Boltzmann constant (in J/K\text{J/K}). Assuming the proportionality constant for IdI_d is independent of temperature, which of the following correctly represents the pair (ΔVth,  ΔIdId)\left( \Delta V_{th}, \; \frac{\Delta I_d}{I_d} \right) when the temperature is increased by a small amount ΔT\Delta T?

Options

  • A.

    (−αeΔT,  E02kBT2ΔT)\left( -\frac{\alpha}{e}\Delta T, \; \frac{E_0}{2k_BT^2}\Delta T \right)

  • B.

    (−αeΔT,  E0−αT2kBT2ΔT)\left( -\frac{\alpha}{e}\Delta T, \; \frac{E_0 - \alpha T}{2k_BT^2}\Delta T \right)

  • C.

    (αeΔT,  E0+αT2kBT2ΔT)\left( \frac{\alpha}{e}\Delta T, \; \frac{E_0 + \alpha T}{2k_BT^2}\Delta T \right)

  • D.

    (−αeΔT,  α2kBTΔT)\left( -\frac{\alpha}{e}\Delta T, \; \frac{\alpha}{2k_BT}\Delta T \right)

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Correct Answer

Step-by-Step Solution

Explanation

How the Examiner Thinks

Multi-Concept_Bridge

Master problems that require linking physics and math concepts to solve complex competitive questions.

Concepts Behind This Question

Photo-diode vs LED Bias|Fermi Level Position|Energy Band Gap Temperature Dependency

Why This Question Is Tricky

Common Mistakes

This question tests the student's ability to correctly apply the temperature dependence of the semiconductor bandgap to device characteristics.

A common trap is treating the bandgap Eg(T)E_g(T) as a static value during the differentiation of the dark current exponent.

Students who make this partial derivative error will incorrectly calculate the fractional change as Eg(T)2kBT2ΔT=E0−αT2kBT2ΔT\frac{E_g(T)}{2k_BT^2}\Delta T = \frac{E_0 - \alpha T}{2k_BT^2}\Delta T.

The physical insight required is that the linear temperature dependence of the bandgap (αT\alpha T) manifests as a temperature-independent constant multiplier in the carrier concentration.

Consequently, the fractional growth rate of the dark current depends exclusively on the zero-temperature extrapolated bandgap E0E_0, completely independent of the bandgap narrowing coefficient α\alpha.

Quick Facts About This Question

Question Information

SubjectPhysics
ChapterSemiconductor Electronics: Materials, Devices, and Simple Circuits - Class 12
ConceptPhoto-diode vs LED Bias
Difficulty8
Cognitive Load7
Target Solve Time160 sec
AccessFree