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Question #43449

Difficulty: 8/10 | 🟢 Free

The Question

A cylindrical semiconductor rod containing a p-n junction is rigidly clamped between two immovable walls along its length (the xx-axis). The lateral surface of the rod is completely free to expand. The rod has a coefficient of linear thermal expansion α\alpha, Poisson's ratio ν\nu, and Young's modulus YY. The temperature of the rod is uniformly increased by ΔT\Delta T.

According to Deformation Potential Theory, the bandgap energy EgE_g of the semiconductor changes with the volumetric strain ΔVV\frac{\Delta V}{V} as ΔEg=ΞΔVV\Delta E_g = \Xi \frac{\Delta V}{V}, where Ξ\Xi is the deformation potential constant (in Joules). Assume the built-in potential VbiV_{bi} of the junction changes solely due to this mechanically-induced bandgap shift, given by ΔVbi=ΔEge\Delta V_{bi} = \frac{\Delta E_g}{e} (where ee is the elementary charge in Coulombs).

The depletion width of the junction is given by W=2εVbieNeffW = \sqrt{\frac{2\varepsilon V_{bi}}{e N_{eff}}}. If the initial built-in potential is Vbi0V_{bi0} and the initial depletion width is W0W_0, which of the following expressions correctly represents the fractional change in the square of the depletion width, Δ(W2)W02\frac{\Delta (W^2)}{W_0^2}?

Options

  • A.

    2ΞαΔT(1+ν)eVbi0\frac{2 \Xi \alpha \Delta T (1+\nu)}{e V_{bi0}}

  • B.

    3ΞαΔTeVbi0\frac{3 \Xi \alpha \Delta T}{e V_{bi0}}

  • C.

    ΞαΔT(1−2ν)eVbi0\frac{\Xi \alpha \Delta T (1-2\nu)}{e V_{bi0}}

  • D.

    2ΞαΔTeVbi0\frac{2 \Xi \alpha \Delta T}{e V_{bi0}}

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Explanation

How the Examiner Thinks

Intuition_Breaker

Train your brain to resist "obvious" answers that are designed to deceive your intuition.

Concepts Behind This Question

Depletion Region Dynamics|Temperature and Kinetic Energy|Thermal Stress in Constrained Rods|Approximations

Why This Question Is Tricky

Common Mistakes

This question tests the synthesis of solid-state mechanics and semiconductor physics.

The primary trap is the 'Linearity Assumption' regarding thermal expansion.

Students commonly assume either a free 3D thermal expansion (yielding a volumetric strain of 3αΔT3\alpha \Delta T) or they incorrectly assume that a 1D constraint simply removes one dimension of expansion (yielding 2αΔT2\alpha \Delta T).

They fail to account for the Poisson effect: the mechanical compressive stress required to keep the rod constrained in the longitudinal direction induces an additional outward mechanical strain in the transverse directions.

This mechanical-electrical coupling demonstrates how macroscopic boundary conditions directly modulate microscopic electronic properties like the depletion width.

Quick Facts About This Question

Question Information

SubjectPhysics
ChapterSemiconductor Electronics: Materials, Devices, and Simple Circuits - Class 12
ConceptDepletion Region Dynamics
Difficulty8
Cognitive Load7
Target Solve Time160 sec
AccessFree