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Question #42569
The Question
Consider an intrinsic semiconductor at temperature with a temperature-dependent energy band gap , where and are positive constants. The intrinsic carrier density is given by , where is a temperature-independent constant and is the Boltzmann constant. Treating the thermally excited electrons and holes as a non-degenerate ideal gas, the Helmholtz free energy per unit volume of this electron-hole gas is . Which of the following represents the electronic entropy per unit volume () and the internal energy per unit volume () of the electron-hole gas?
Options
- A.
- B.
- C.
- D.
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Correct Answer
Step-by-Step Solution
Explanation
How the Examiner Thinks
Multi-Concept_Bridge
Master problems that require linking physics and math concepts to solve complex competitive questions.
Concepts Behind This Question
Entropy and Reversibility|Equipartition Theorem|Energy Band Gap Temperature Dependency
Why This Question Is Tricky
Common Mistakes
This question targets a profound misconception in semiconductor thermodynamics: conflating the temperature-dependent band gap with the internal energy of electron-hole pair formation.
Students often naively assume the internal energy is by applying the equipartition theorem and adding the instantaneous gap energy.
However, actually represents the change in Helmholtz free energy () required to create a pair.
By forcing students to derive entropy from the free energy , the math reveals that the term in cancels out during differentiation.
The true internal energy of formation is , demonstrating that the temperature dependence of the band gap is purely an entropic effect driven by electron-phonon interactions and lattice expansion.
Quick Facts About This Question
Question Information
| Subject | Physics |
| Chapter | Thermodynamics - Class 11 Part 2 |
| Concept | Entropy and Reversibility |
| Difficulty | 8 |
| Cognitive Load | 7 |
| Target Solve Time | 160 sec |
| Access | Free |